A thermoelectric generator comprising selenium-doped bismuth telluride on flexible carbon cloth with n-type thermoelectric properties

Carbon cloth was used as a flexible substrate for bismuth telluride (Bi₂Te₃) particles to provide flexibility and improve the overall thermoelectric performance. Bi₂Te₃ on carbon cloth (Bi₂Te₃/CC) was synthesized via a hydrothermal reaction with various reaction times. After over 12 h, the Bi₂Te₃ particles showed a clear hexagonal shape and were evenly adhered to the carbon cloth. Selenium (Se) atoms were doped into the Bi₂Te₃ structure to improve its thermoelectric performance. The electrical conductivity increased with increasing Se-dopant content until 40% Se was added. Moreover, the maximum power factor was 1300 μW/mK² at 473 K for the 30% Se-doped sample. The carbon cloth substrate maintained its electrical resistivity and flexibility after 2000 bending cycles. A flexible thermoelectric generator (TEG) fabricated using the five pairs of 30% Se-doped sample showed an open-circuit voltage of 17.4 mV and maximum power output of 850 nW at temperature difference ΔT = 30 K. This work offers a promising approach for providing flexibility and improving the thermoelectric performance of inorganic thermoelectric materials for wearable device applications using flexible carbon cloth substrate for low temperature range application.     

Essential (Mg,Fe, Zn and Cu) and Non-Essential (Cd and Pb) Elements in Predatory Insects (Vespa crabro and Vespa velutina): A Molecular Perspective

The recent introduction of the Asian yellow-legged hornet, Vespa velutina, into Europe has raised concern regarding the threat to honeybees and the competition with the European hornet, Vespa crabro. The aim of this study was to investigated essential (Mg, Fe, Zn, Cu) and non-essential (Cd and Pb) elements in these two species. Element concentrations were determined in the whole body and separately in the head, thorax and abdomen using atomic absorption spectrometry (AAS). The changes in essential element concentration and speciation during metamorphosis were also studied using size exclusion chromatography followed by AAS and proteomic analysis. In both species, the essential elements were more concentrated in the abdomen due to the presence of fat bodies. Magnesium, Fe and Zn concentrations were significantly higher in V. crabro than in V. velutina and could have been related to the higher aerobic energy demand of the former species required to sustain foraging flight. Low concentrations of Cd and Pb were indicative of low environmental exposure. The concentration and speciation of essential elements, particularly Fe, varied among the developmental stages, indicating a modification of ligand preferences during metamorphosis. Overall, the results in the present study provide a better understanding of the hornet metal metabolism and a foundation for additional studies.     

Transverse magnetoresistance peculiarities of thermoelectric Lu-doped Bi2Te3 compound due to strong electrical disorder

The n-type thermoelectric Bi_1.9Lu_0.1Te₃ was prepared by microwave-solvothermal method and spark plasma sintering. The magnetic field and temperature dependences of transverse magnetoresistance measured within temperature 2–200 K interval allow finding the peculiarities characteristic for strongly disordered and inhomogeneous semiconductors. The first peculiarity is due to appearance of linear-in-magnetic field contribution to the total magnetoresistance reflected in a crossover from quadratic magnetoresistance at low magnetic fields to linear magnetoresistance at high magnetic fields. The linear magnetoresistance can result from the Hall resistance picked up from macroscopically distorted current paths due to local variations in stoichiometry of the compound studied. The second peculiarity is that both linear magnetoresistance magnitude and crossover field are functions of carrier mobility which is in agreement with the Parish and Littlewood model developed for disordered and inhomogeneous semiconductors. An increase in the mobility due to a decrease in temperature is accompanied by an increase in the magnetoresistance magnitude and a decrease in the crossover field. Finally, the third peculiarity is related to the remarkable deviation of the total magnetoresistance measured at various temperatures from the Kohler's rule. Presence of strong inhomogeneity and disorder in the Bi_1.9Lu_0.1Te₃ structure concluded from the magnetoresistance peculiarities can be responsible for the remarkable reduction in the total thermal conductivity of this compound.     

Genetic Carriers and Genomic Distribution of cadA6—A Novel Variant of a Cadmium Resistance Determinant Identified in Listeria spp.

Listeria monocytogenes is a pathogen responsible for severe cases of food poisoning. Listeria spp. strains occurring in soil and water environments may serve as a reservoir of resistance determinants for pathogenic L. monocytogenes strains. A large collection of Listeria spp. strains (155) isolated from natural, agricultural, and urban areas was screened for resistance to heavy metals and metalloids, and the presence of resistance determinants and extrachromosomal replicons. Of the tested strains, 35% were resistant to cadmium and 17% to arsenic. Sequence analysis of resistance plasmids isolated from strains of Listeria seeligeri and Listeria ivanovii, and the chromosome of L. seeligeri strain Sr73, identified a novel variant of the cadAC cadmium resistance efflux system, cadA6, that was functional in L. monocytogenes cells. The cadA6 cassette was detected in four Listeria species, including strains of L. monocytogenes, isolated from various countries and sources—environmental, food-associated, and clinical samples. This resistance cassette is harbored by four novel composite or non-composite transposons, which increases its potential for horizontal transmission. Since some cadAC cassettes may influence virulence and biofilm formation, it is important to monitor their presence in Listeria spp. strains inhabiting different environments.     

Single and matrix HgCdTe photovoltaic detectors

The recent researches and technological developments of middle and long wavelength infrared HgCdTe photovoltaic detectors are presented. Structure, topology, design and performance of HgCdTe photodiodes, silicon readout electronics, Focal Plane Arrays both staring and time delay and integration types, thermal imagers are discussed. Negative differential conductance, bistability and high frequency oscillations under background infrared radiation in HgCdTe photodiodes are reported.     

Sensitometric characteristics of an all‐solid‐state photoelectrochromic pixel for an electrochromic light‐addressable display

Abstract— An all solid‐state photoelectrochromic element (PECE) was developed on the basis of electrochromic layers of WO₃ and polyaniline with a layer of polymer electrolyte placed on a base of polyamidosulfoacid, in which a thin‐film CdS_xSe_1?x photoresistor was used as an electronic key. The dependence of the sensitometric characteristics of the PECE on the applied voltage was studied.     

钛合金的银脆,镉脆敏感性及其控制

利用慢应变速率拉伸技术（ＳＳＲＴ），并结合恒载实验，较全面地研究了Ｔｉ－６Ａｌ－４Ｖ合金的银脆行为、固态与液态镉脆行为，确定了应变速率、接触条件、热处理制度、试样取向、温度等因素对Ｔｉ－６Ａｌ－４Ｖ合金银脆与镉脆敏感性的影响，探讨了Ｎｉ阻挡层对控制Ｔｉ－６Ａｌ－４Ｖ合金和ＴＣ１１合金银脆开裂的作用。     

(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

CdTe-CdS solar cells — Production in a new baseline and investigation of material properties

In this paper, we describe our new baseline for CSS-CdTe-CdS solar cells on 10 × 10 cm² substrates. The deposition of the p-n junction and all the following steps were performed at the Institut für Festkörperphysik (IFK) in Jena. Using the new baseline, we are already able to produce solar cells with similar properties as commercial ones. In the batch type process, all manufacturing steps can be investigated separately. We employ Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and external quantum efficiency (EQE) measurements to characterise the structure of the bulk materials and interfaces. It is demonstrated that by RBS the front contact becomes accessible for thinned CdTe films. At the back contact, RBS spectra show a tellurium accumulation which is due to etching. This tellurium rich layer is confirmed by XRD with Rietveld refinement. The intermixing at the CdS-CdTe interface caused by the activation step is quantified by a bandgap determination based on EQE measurements. From the bandgap energy of the CdTe_1 − xS_x compound, we calculated the sulphur fraction x at the interface. XRD measurements imply that the activation step induces a (111) texture in CdTe. With regard to an improved manufacturing process, our cells are compared to industrial cells produced by Antec Solar Energy.     

变温长波碲镉汞光电导现象研究

报道了ｎ型Ｈｇ０．８Ｃｌ０．２Ｔｅ光电导体的变温材料参数与性能参数的对照关系，并讨论了材料的锭条参数与小芯片霍耳参数的差异，得到一组光电导的实验优化数据，实测小芯片载流子浓度ｎ≈１．８×１０＾１５ｃｍ＾－３，这与高性能器件实测值的倒推数值一致，这被解释为长江红外高背景辐射的结果。